IRG7PH35UD1MPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Low Switching Losses

IRG7PH35UD1MPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V_(BR)CES
∆V(B R)CES /∆T J
Collector-to-E mitter Breakdown Voltage
T emperatureCoeff. of Breakdown Voltage
1200 —
—
—
1.2
—
V_CE(on)
Collector-to-Emitter Saturation Voltage
—
1.9
2.2
—
2.3
—
V_GE(th)
gfe
Gate Threshold Voltage
Forward Transconductance
3.0
—
6.0
—
22
—
I_CES
Collector-to-Emitter Leakage Current
—
1.0 100
—
120
—
V_FM
Diode Forward Voltage Drop
—
1.15 1.26
—
1.08
—
I_GES
Gate-to-Emitter Leakage Current
—
—
±100
Units Conditions
e V V_GE = 0V, I_C = 100µA
V/°C V_GE = 0V, I_C = 1mA (25°C-150°C)
V I_C = 20A, V_GE = 15V, T_J = 25°C
I_C = 20A, V_GE = 15V, T_J = 150°C
V V_CE = V_GE, I_C = 600µA
S V_CE = 50V, I_C = 20A, PW = 30µs
µA V_GE = 0V, V_CE = 1200V
V_GE = 0V, V_CE = 1200V, T_J = 150°C
V I_F = 20A
I_F = 20A, T_J = 150°C
nA V_GE = ±30V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Q_g
Total Gate Charge (turn-on)
Q_ge
Gate-to-Emitter Charge (turn-on)
Q_gc
Gate-to-Collector Charge (turn-on)
—
85
130
—
15
20
—
35
50
E_{of f}
Turn-Off Switching Loss
—
620 850
t _{d(off )}
t_f
Turn-Off delay time
Fall time
—
160 180
—
80
105
E_{of f}
Turn-Off Switching Loss
— 1120 —
t _{d(off )}
t_f
C_ies
C_oes
C_res
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
190
—
—
210
—
— 1940 —
—
120
—
—
40
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Units
Conditions
I_C = 20A
nC V_GE = 15V
V_CC = 600V
I_C = 20A, V_CC = 600V, V_GE = 15V
µJ R_G = 10Ω, L = 200µH,L_S = 150nH, T_J = 25°C
E nergy los s es includetail
ns I_C = 20A, V_CC = 600V, V_GE = 15V
R_G = 10Ω, L = 200µH,L_S = 150nH, T_J = 25°C
I_C = 20A, V_CC = 600V, V_GE=15V
µJ R_G = 10Ω, L = 200µH,L_S = 150nH, T_J = 150°C
E nergy los s es includetail
ns I_C = 20A, V_CC = 600V, V_GE = 15V
R_G = 10Ω, L = 200µH,L_S = 150nH, T_J = 150°C
pF V_GE = 0V
V_CC = 30V
f = 1.0Mhz
T_J = 150°C, I_C = 80A
V_CC = 960V, Vp =1200V
Rg = 10Ω, V_GE = +20V to 0V
Notes:
 V_CC = 80% (V_CES), V_GE = 20V, R_G = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V_(BR)CES safely.
„ R_θ is measured at T_J approximately 90°C.
… FBSOA operating conditions only.
† V_GE = 0V, T_J = 75°C, PW ≤ 10µs.
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April 24, 2013