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| IRG4MC50F Datasheet, PDF (2/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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IRG4MC50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 âââ âââ V VGE = 0V, IC = 1.0 mA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage S 17 âââ âââ V VGE = 0V, IC = 1.0 A
âV(BR)CES/âTJ Temperature Coeff. of Breakdown Voltage âââ 0.58 âââ V/°C VGE = 0V, IC = 1.0 mA
âââ âââ 2.0
IC = 30A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
âââ âââ 2.2 V IC = 35A
See Fig.2, 5
âââ âââ 1.9
IC = 30A , TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 âââ 6.0
VCE = VGE, IC = 1.0 mA
âVGE(th)/âTJ Temperature Coeff. of Threshold Voltage âââ -11.8 âââ mV/°C VCE = VGE, IC = 250 µA
gfe
Forward Transconductance T
21 âââ âââ S VCE ⥠15V, IC = 30A
ICES
Zero Gate Voltage Collector Current
âââ âââ 250 µ A VGE = 0V, VCE = 480V
âââ âââ 2000
VGE = 0V, VCE = 480V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
âââ âââ ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Ets
td(on)
tr
td(off)
tr
Ets
LC+LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
âââ âââ 290
IC = 30A
âââ âââ 42
âââ âââ 97
nC VCC = 480V
VGE = 15V
See Fig. 8
âââ âââ 50
TJ = 25°C
âââ âââ 25 ns IC = 30A, VCC = 480V
âââ âââ 350
VGE = 15V, RG = 2.35â¦
âââ âââ 300
Energy losses include "tail"
âââ âââ 3.0 mJ See Fig. 10, 11, 13, 14
âââ âââ 50
TJ = 125°C,
âââ âââ 25 ns IC = 30A, VCC = 480V
âââ âââ 475
VGE = 15V, RG = 2.35â¦
âââ âââ 400
Energy losses include "tail"
âââ âââ 6.0 mJ See Fig. 13, 14
âââ 6.8 âââ nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
âââ 4100 âââ
VGE = 0V
âââ 250 âââ pF VCC = 30V
âââ 49 âââ
Æ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 2.35â¦,
(See fig. 13a)
S Pulse width ⤠80µs; duty factor ⤠0.1%.
T Pulse width 5.0µs, single shot.
2
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