IRG4BC20WPBF Datasheet, PDF (2/9 Pages) International Rectifier –
INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC20WPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)CES
V_(BR)ECS
∆V_(BR)CES/∆T_J
V_CE(ON)
V_GE(th)
∆V_GE(th)/∆T_J
g_fe
I_CES
I_GES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
5.5
—
—
—
—
Typ.
—
—
0.48
2.16
2.55
2.05
—
-8.8
8.3
—
—
—
—
Max. Units
Conditions
—
V V_GE = 0V, I_C = 250µA
—
V V_GE = 0V, I_C = 1.0A
— V/°C V_GE = 0V, I_C = 1.0mA
2.6
I_C = 6.5A
V_GE = 15V
—
V
I_C = 13A
See Fig.2, 5
—
I_C = 6.5A , T_J = 150°C
6.0
V_CE = V_GE, I_C = 250µA
— mV/°C V_CE = V_GE, I_C = 250µA
— S V_CE = 100 V, I_C = 6.5A
250 _µA V_GE = 0V, V_CE = 600V
2.0
V_GE = 0V, V_CE = 10V, T_J = 25°C
1000
V_GE = 0V, V_CE = 600V, T_J = 150°C
±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
26
3.7
10
22
14
110
64
0.06
0.08
0.14
21
15
150
150
0.34
7.5
490
38
8.8
Max.
38
5.5
15
—
—
160
96
—
—
0.2
—
—
—
—
—
—
—
—
—
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
I_C = 6.5A
V_CC = 400V
See Fig.8
V_GE = 15V
T_J = 25°C
I_C = 6.5A, V_CC = 480V
V_GE = 15V, R_G = 50Ω
Energy losses include "tail"
See Fig. 9, 10, 14
T_J = 150°C,
I_C = 6.5A, V_CC = 480V
V_GE = 15V, R_G = 50Ω
Energy losses include "tail"
See Fig. 10, 11, 14
Measured 5mm from package
V_GE = 0V
V_CC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; V_GE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ V_CC = 80%(V_CES), V_GE = 20V, L = 10µH, R_G = 50Ω,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
2
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