IRG4BC20FD-S Datasheet, PDF (2/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

IRG4BC20FD-S
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V V_GE = 0V, I_C = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C V_GE = 0V, I_C = 1.0mA
V_CE(on)
Collector-to-Emitter Saturation Voltage — 1.66 2.0
I_C = 9.0A
V_GE = 15V
— 2.06 — V I_C = 16A
See Fig. 2, 5
— 1.76 —
I_C = 9.0A, T_J = 150°C
V_GE(th)
Gate Threshold Voltage
3.0 — 6.0
V_CE = V_GE, I_C = 250µA
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage — -11 — mV/°C V_CE = V_GE, I_C = 250µA
g_fe
Forward Transconductance T
2.9 5.1 — S V_CE = 100V, I_C = 9.0A
I_CES
Zero Gate Voltage Collector Current
— — 250 µA V_GE = 0V, V_CE = 600V
— — 1700
V_GE = 0V, V_CE = 600V, T_J = 150°C
V_FM
Diode Forward Voltage Drop
— 1.4 1.7 V I_C = 8.0A
See Fig. 13
— 1.3 1.6
I_C = 8.0A, T_J = 150°C
I_GES
Gate-to-Emitter Leakage Current
— — ±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Qge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
di_(rec)M/dt
2
Parameter
Min. Typ. Max. Units
Conditions
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
— 27 40
I_C = 9.0A
— 4.2 6.2 nC V_CC = 400V
See Fig. 8
Gate - Collector Charge (turn-on)
Turn-On Delay Time
— 9.9 15
— 43 —
V_GE = 15V
T_J = 25°C
Rise Time
Turn-Off Delay Time
— 20 — ns I_C = 9.0A, V_CC = 480V
— 240 360
V_GE = 15V, R_G = 50Ω
Fall Time
— 150 220
Energy losses include "tail" and
Turn-On Switching Loss
— 0.25 —
diode reverse recovery.
Turn-Off Switching Loss
— 0.64 — mJ See Fig. 9, 10, 18
Total Switching Loss
— 0.89 1.3
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 41 —
— 22 —
— 320 —
— 290 —
T_J = 150°C, See Fig. 10, 11, 18
ns I_C = 9.0A, V_CC = 480V
V_GE = 15V, R_G = 50Ω
Energy losses include "tail" and
Total Switching Loss
— 1.35 — mJ diode reverse recovery.
Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Input Capacitance
Output Capacitance
— 540 —
— 37 —
V_GE = 0V
pF V_CC = 30V
See Fig. 7
Reverse Transfer Capacitance
— 7.0 —
ƒ = 1.0MHz
Diode Reverse Recovery Time
— 37 55 ns T_J = 25°C See Fig.
— 55 90
Diode Peak Reverse Recovery Current — 3.5 5.0
T_J = 125°C 14
A T_J = 25°C See Fig.
I_F = 8.0A
Diode Reverse Recovery Charge
— 4.5 8.0
T_J = 125°C 15
V_R = 200V
— 65 138 nC T_J = 25°C See Fig.
Diode Peak Rate of Fall of Recovery
— 124 360
T_J = 125°C 16 di/dt = 200A/µs
— 240 — A/µs T_J = 25°C See Fig.
During t_b
— 210 —
T_J = 125°C 17
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