IRG4BC15MDPBF Datasheet, PDF (2/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4BC15MDPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––
V_CE(on)
Collector-to-Emitter Saturation Voltage –––
–––
–––
V_GE(th)
Gate Threshold Voltage
4.0
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage –––
g_fe
Forward Transconductance „
2.3
I_CES
Zero Gate Voltage Collector Current –––
–––
V_FM
Diode Forward Voltage Drop
–––
–––
I_GES
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.65 ––– V/°C
1.88 2.3
2.6 ––– V
2.1 –––
––– 6.5
-10 ––– mV/°C
3.4 ––– S
––– 250 µA
––– 1400
1.5 1.8 V
1.4 1.7
––– ±100 nA
V_GE = 0V, I_C = 250µA
V_GE = 0V, I_C = 1.0mA
I_C = 8.6A
V_GE = 15V
I_C = 14A
I_C = 8.6A, T_J = 150°C
V_CE = V_GE, I_C = 250µA
V_CE = V_GE, I_C = 250µA
V_CE = 100V, I_C = 6.5A
V_GE = 0V, V_CE = 600V
V_GE = 0V, V_CE = 600V, T_J = 150°C
I_C = 4.0A
I_C = 4.0A, T_J = 150°C
V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Qge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
di_(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t_b
––– 46 –––
––– 4.2 –––
––– 15 –––
––– 21 –––
––– 38 –––
––– 540 810
––– 350 530
––– 0.32 –––
––– 1.93 –––
––– 2.25 3.6
––– 20 –––
––– 42 –––
––– 650 –––
––– 590 –––
––– 3.0 –––
––– 7.5 –––
––– 340 –––
––– 35 –––
––– 8.8 –––
––– 28 42
––– 38 57
––– 2.9 5.2
––– 3.7 6.7
––– 40 60
––– 70 110
––– 280 –––
––– 240 –––
I_C = 8.6A
nC V_CC = 400V
V_GE = 15V
T_J = 25°C
ns I_C = 8.6A, V_CC = 480V
V_GE = 15V, R_G = 75Ω
Energy losses include "tail" and
diode reverse recovery.
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
T_J = 150°C,
I_C = 8.6A, V_CC = 480V
V_GE = 15V, R_G = 75Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V_GE = 0V
V_CC = 30V
ƒ = 1.0MHz
T_J = 25°C
T_J = 125°C
I_F = 4.0A
T_J = 25°C
T_J = 125°C
V_R = 200V
T_J = 25°C
T_J = 125°C
di/dt 200A/µs
T_J = 25°C
T_J = 125°C