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IRFZ48VS Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) | |||
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IRFZ48VS
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max.
60 âââ âââ
âââ 0.064 âââ
âââ âââ 12.0
2.0 âââ 4.0
35 âââ âââ
âââ âââ 25
âââ âââ 250
âââ âââ 100
âââ âââ -100
âââ âââ 110
âââ âââ 29
âââ âââ 36
âââ 7.6 âââ
âââ 200 âââ
âââ 157 âââ
âââ 166 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 1985 âââ
âââ 496 âââ
âââ 91 âââ
Units
V
V/°C
mâ¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 43A Â
VDS = VGS, ID = 250µA
VDS = 25V, ID = 43AÂ
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 72A
VDS = 48V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 30V
ID = 72A
RG = 9.1â¦
RD = 0.34â¦, See Fig. 10 Â
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 72
A showing the
integral reverse
G
âââ âââ 290
p-n junction diode.
S
âââ âââ 2.0 V TJ = 25°C, IS = 72A, VGS = 0V Â
âââ 70 100 ns TJ = 25°C, IF = 72A
âââ 155 233 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 64µH
RG = 25â¦, IAS = 72A. (See Figure 12)
 ISD ⤠72A, di/dt ⤠151A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
2
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