IRFTS8342PBF Datasheet, PDF (2/8 Pages) International Rectifier – Industry-Standard TSOP-6 Package

IRFTS8342PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
Drain-to-Source Breakdown Voltage
30
V_DSS/T_J
Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
–––
V_GS(th)
Gate Threshold Voltage
1.35
V_GS(th)
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
12
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Thermal Resistance
Parameter
R_JA
e Junction-to-Ambient
Typ.
–––
18
15
22
1.80
-5.7
–––
–––
–––
–––
–––
4.8
2.1
1.6
2.6
7.3
15
9.1
8.2
560
102
48
Typ.
–––
–––
–––
8.2
4.5
Max.
–––
–––
19
29
2.35
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
dd _m
V_GS = 10V, I_D = 8.2A
V_GS = 4.5V, I_D = 6.6A
V VDS = VGS, ID = 25μA
mV/°C
μA ^{VDS = 24V, VGS = 0V}
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 20V}
V_GS = -20V
S VDS = 10V, ID = 6.6A
V_GS = 4.5V
nC VDS = 15V
I_D = 6.6A

eà V_DD = 15V, V_GS = 4.5V
ns ^{ID = 6.6.A}
R_G = 6.8
V_GS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Max.
2.5
80
1.0
12
5.4
Units
Conditions
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
d V T_J = 25°C, I_S = 6.6A, V_GS = 0V
d ^{ns TJ = 25°C, IF = 6.6A, VDD = 24V}
nC di/dt = 100/μs
Typ.
–––
Max.
62.5
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width  400μs; duty cycle  2%.
ƒ When mounted on 1 ich square copper board.
2
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