IRFS4229TRLPBF Datasheet, PDF (2/9 Pages) International Rectifier –
Advanced Process Technology

IRFS4229PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
Drain-to-Source Breakdown Voltage
250 ––– ––– V VGS = 0V, ID = 250µA
∆ΒV_DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
210
42
e ^{––– mV/°C Reference to 25°C, ID = 1mA}
48 mΩ VGS = 10V, ID = 26A
V_GS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V ^VDS ^{= V}GS^{, I}D ^{= 250µA}
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -14 ––– mV/°C
––– ––– 20
––– ––– 200
µA ^{VDS = 250V, VGS = 0V}
V_DS = 250V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA ^VGS ^{= 20V}
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
g_fs
Forward Transconductance
Q_g
Total Gate Charge
Q_gd
Gate-to-Drain Charge
t_d(on)
Turn-On Delay Time
83 –––
––– 72
–––
110
e ^{S VDS = 25V, ID = 26A}
nC ^{VDD = 125V, ID = 26A, VGS = 10V}
––– 26 –––
––– 18 –––
Ãe V_DD = 125V, V_GS = 10V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 31 ––– _ns ^ID ^{= 26A}
––– 30 –––
R_G = 2.4Ω
t_f
Fall Time
––– 21 –––
See Fig. 22
t_st
Shoot Through Blocking Time
100 ––– ––– ns V_DD = 200V, V_GS = 15V, R_G= 4.7Ω
E_PULSE
Energy per Pulse
––– 790 –––
––– 1390 –––
L = 220nH, C= 0.3µF, V_GS = 15V
µJ ^{VDS = 200V, RG= 4.7Ω, TJ = 25°C}
L = 220nH, C= 0.3µF, V_GS = 15V
V_DS = 200V, R_G= 4.7Ω, T_J = 100°C
C_iss
Input Capacitance
––– 4560 –––
V_GS = 0V
C_oss
Output Capacitance
––– 390 ––– _pF VDS = 25V
C_rss
Reverse Transfer Capacitance
––– 100 –––
ƒ = 1.0MHz,
C_oss eff.
Effective Output Capacitance
––– 290 –––
V_GS = 0V, V_DS = 0V to 200V
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
––– 4.5 –––
Between lead,
D
and center of die contact
nH
G
––– 7.5 –––
S
Avalanche Characteristics
E_AS
E_AR
V_{DS(Avalanche)}
I_AS
Parameter
d Single Pulse Avalanche Energy
™ Repetitive Avalanche Energy
Ù Repetitive Avalanche Voltage
Ãd Avalanche Current
Diode Characteristics
Parameter
I_S @ T_C = 25°C Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Typ.
Max.
Units
–––
130
mJ
–––
33
mJ
300
–––
V
–––
26
A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
190
840
Max. Units
Conditions
MOSFET symbol
45
showing the
A
integral reverse
180
p-n junction diode.
1.3
e V T_J = 25°C, I_S = 26A, V_GS = 0V
290
1260
ns ^TJ ^{= 25°C, I}F ^{= 26A, V}DD ^{= 50V}
e nC di/dt = 100A/µs
2
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