IRFS4228TRLPBF Datasheet, PDF (2/10 Pages) International Rectifier – Advanced Process Technology

IRFS/SL4228PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
Drain-to-Source Breakdown Voltage
150 ––– ––– V ^VGS ^{= 0V, I}D ^{= 250µA}
∆ΒV_DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
150
12
e ^{––– mV/°C Reference to 25°C, ID = 1mA}
15 mΩ ^VGS ^{= 10V, I}D ^{= 33A}
V_GS(th)
Gate Threshold Voltage
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -14 ––– mV/°C
––– ––– 20 µA VDS = 150V, VGS = 0V
––– ––– 1.0 mA ^VDS ^{= 150V, V}GS ^{= 0V, T}J ^{= 125°C}
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
g_fs
Forward Transconductance
Q_g
Total Gate Charge
170 ––– –––
––– 71 107
e ^{S VDS = 25V, ID = 50A}
nC ^VDD ^{= 75V, I}D ^{= 50A, V}GS ^{= 10V}
Q_gd
Gate-to-Drain Charge
t_d(on)
Turn-On Delay Time
––– 21 –––
––– 18 –––
Ãe V_DD = 75V, V_GS = 10V
t_r
Rise Time
––– 59 ––– ns ID = 50A
t_d(off)
Turn-Off Delay Time
––– 24 –––
R_G = 2.5Ω
t_f
Fall Time
––– 33 –––
See Fig. 22
t_st
Shoot Through Blocking Time
100 ––– ––– ns V_DD = 120V, V_GS = 15V, R_G= 5.1Ω
E_PULSE
Energy per Pulse
––– 58 –––
L = 220nH, C= 0.3µF, V_GS = 15V
µJ V_DS = 120V, R_G= 5.1Ω, T_J = 25°C
––– 110 –––
L = 220nH, C= 0.3µF, V_GS = 15V
V_DS = 120V, R_G= 5.1Ω, T_J = 100°C
C_iss
Input Capacitance
––– 4530 –––
V_GS = 0V
C_oss
Output Capacitance
––– 550 ––– pF ^VDS ^{= 25V}
C_rss
Reverse Transfer Capacitance
––– 100 –––
ƒ = 1.0MHz
C_oss eff.
Effective Output Capacitance
––– 480 –––
V_GS = 0V, V_DS = 0V to 120V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
E_AS
E_AR
V_{DS(Avalanche)}
I_AS
Parameter
d Single Pulse Avalanche Energy
™ Repetitive Avalanche Energy
Ù Repetitive Avalanche Voltage
Ãd Avalanche Current
Diode Characteristics
Parameter
I_S @ T_C = 25°C Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Typ.
Max.
Units
–––
120
mJ
–––
33
mJ
180
–––
V
–––
50
A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
76
230
Max. Units
Conditions
83
MOSFET symbol
A showing the
330
integral reverse
p-n junction diode.
1.3
e V T_J = 25°C, I_S = 50A, V_GS = 0V
110 ns ^TJ ^{= 25°C, I}F ^{= 50A, V}DD ^{= 50V}
e 350 nC di/dt = 100A/µs
2
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