IRFS4227PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Advanced Process Technology

IRFS/SL4227PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
Drain-to-Source Breakdown Voltage
200 ––– ––– V ^VGS ^{= 0V, I}D ^{= 250µA}
∆ΒV_DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
170
22
e ^{––– mV/°C Reference to 25°C, ID = 1mA}
26 mΩ ^VGS ^{= 10V, I}D ^{= 46A}
V_GS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
––– -13 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 200 µA ^VDS ^{= 200V, V}GS ^{= 0V, T}J ^{= 125°C}
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
g_fs
Forward Transconductance
Q_g
Total Gate Charge
49 ––– –––
––– 70 98
e ^{S VDS = 25V, ID = 46A}
nC ^VDD ^{= 100V, I}D ^{= 46A, V}GS ^{= 10V}
Q_gd
Gate-to-Drain Charge
t_d(on)
Turn-On Delay Time
––– 23 –––
––– 33 –––
Ãe V_DD = 100V, V_GS = 10V
t_r
Rise Time
––– 20 ––– ns ID = 46A
t_d(off)
Turn-Off Delay Time
––– 21 –––
R_G = 2.5Ω
t_f
Fall Time
––– 31 –––
See Fig. 22
t_st
Shoot Through Blocking Time
100 ––– ––– ns V_DD = 160V, V_GS = 15V, R_G= 4.7Ω
E_PULSE
Energy per Pulse
––– 570 –––
L = 220nH, C= 0.4µF, V_GS = 15V
µJ V_DS = 160V, R_G= 4.7Ω, T_J = 25°C
––– 910 –––
L = 220nH, C= 0.4µF, V_GS = 15V
V_DS = 160V, R_G= 4.7Ω, T_J = 100°C
C_iss
Input Capacitance
––– 4600 –––
V_GS = 0V
C_oss
Output Capacitance
––– 460 ––– pF ^VDS ^{= 25V}
C_rss
Reverse Transfer Capacitance
––– 91 –––
ƒ = 1.0MHz,
C_oss eff.
Effective Output Capacitance
––– 360 –––
V_GS = 0V, V_DS = 0V to 160V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
E_AS
E_AR
V_{DS(Avalanche)}
I_AS
Parameter
d Single Pulse Avalanche Energy
™ Repetitive Avalanche Energy
Ù Repetitive Avalanche Voltage
Ãd Avalanche Current
Diode Characteristics
Parameter
I_S @ T_C = 25°C Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Typ.
Max.
Units
–––
140
mJ
–––
46
mJ
240
–––
V
–––
37
A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
100
430
Max. Units
Conditions
MOSFET symbol
62
A showing the
integral reverse
260
p-n junction diode.
1.3
e V T_J = 25°C, I_S = 46A, V_GS = 0V
150 ns ^TJ ^{= 25°C, I}F ^{= 46A, V}DD ^{= 50V}
e 640 nC di/dt = 100A/µs
2
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