IRFS3607PBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB/S/SL3607PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75 ––– –––
––– 0.096 –––
––– 7.34 9.0
V V_GS = 0V, I_D = 250μA
d V/°C Reference to 25°C, I_D = 5mA
g m V_GS = 10V, I_D = 46A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 100μA
––– ––– 20 μA V_DS = 75V, V_GS = 0V
––– ––– 250
V_DS = 60V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
115 ––– –––
Q_g
Total Gate Charge
––– 56 84
Q_gs
Gate-to-Source Charge
––– 13 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 16 –––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 40 –––
R_G(int)
Internal Gate Resistance
––– 0.55 –––
t_d(on)
Turn-On Delay Time
––– 16 –––
t_r
Rise Time
––– 110 –––
t_d(off)
Turn-Off Delay Time
––– 43 –––
t_f
Fall Time
––– 96 –––
C_iss
Input Capacitance
––– 3070 –––
C_oss
Output Capacitance
––– 280 –––
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Reverse Transfer Capacitance
–––
j Effective Output Capacitance (Energy Related) –––
h Effective Output Capacitance (Time Related)
–––
130
380
610
–––
–––
–––
S V_DS = 50V, I_D = 46A
nC I_D = 46A
g ^{VDS = 38V}
V_GS = 10V
I_D = 46A, V_DS =0V, V_GS = 10V

ns V_DD = 49V
I_D = 46A
g ^{RG = 6.8}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
j V_GS = 0V, V_DS = 0V to 60V
h V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
dv/dt
Diode Forward Voltage
Peak Diode Recovery
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 80
A MOSFET symbol
D
showing the
––– ––– 310
integral reverse
G
–––
–––
–––
27
1.3
–––
p-n junction diode.
g V T_J = 25°C, I_S = 46A, V_GS = 0V
f V/ns T_J = 175°C, I_S = 46A, V_DS = 75V
S
––– 33 50 ns T_J = 25°C
V_R = 64V,
––– 39 59
T_J = 125°C
––– 32 48 nC T_J = 25°C
g ^{IF = 46A}
di/dt = 100A/μs
––– 47 71
T_J = 125°C
––– 1.9 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction ^{„ ISD  46A, di/dt  1920A/μs, VDD V(BR)DSS, TJ  175°C.}
temperature. Note that current limitations arising from heating of the ^{… Pulse width  400μs; duty cycle  2%.}
device leads may occur with some lead mounting arrangements.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
‚ Repetitive rating; pulse width limited by max. junction
as C_oss while V_DS is rising from 0 to 80% V_DSS.
temperature.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.12mH
R_G = 25, I_AS = 46A, V_GS =10V. Part not recommended for use
above this value.
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_is measured at T_J approximately 90°C.
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