IRFS3307ZPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB/S/SL3307ZPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 –––
––– 0.094
––– 4.6
–––
–––
5.8
V V_GS = 0V, I_D = 250μA
d V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 75A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 150μA
R_G(int)
I_DSS
I_GSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 0.70 –––
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
Ω
μA V_DS = 75V, V_GS = 0V
V_DS = 75V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
320 ––– –––
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
––– 79 110
––– 19 –––
Q_gd
Q_sync
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
––– 24 –––
––– 55 –––
t_d(on)
Turn-On Delay Time
t_r
Rise Time
––– 15 –––
––– 64 –––
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
––– 38 –––
––– 65 –––
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 4750 –––
––– 420 –––
C_rss
Reverse Transfer Capacitance
––– 190 –––
i ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 440 –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 410 –––
S V_DS = 50V, I_D = 75A
nC I_D = 75A
g ^{VDS = 38V}
V_GS = 10V
I_D = 75A, V_DS =0V, V_GS = 10V
ns V_DD = 49V
I_D = 75A
g ^{RG = 2.6Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
j V_GS = 0V, V_DS = 0V to 60V
h V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãdi (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 128 A MOSFET symbol
D
showing the
––– ––– 512
integral reverse
G
p-n junction diode.
S
––– ––– 1.3
g V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 33 50 ns T_J = 25°C
V_R = 64V,
––– 39 59
T_J = 125°C
––– 42 63 nC T_J = 25°C
g ^{IF = 75A}
di/dt = 100A/μs
––– 56 84
T_J = 125°C
––– 2.2 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ I_SD ≤ 75A, di/dt ≤ 1570A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.050mH
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
above this value.
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
2
www.irf.com