|
IRFS3206PBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
|
◁ |
IRF/B/S/SL3206PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
Min.
60
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.07
2.4
âââ
âââ
âââ
âââ
âââ
0.7
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 5mAd
3.0 m⦠VGS = 10V, ID = 75A g
4.0 V VDS = VGS, ID = 150µA
20 µA VDS =60V, VGS = 0V
250
VDS = 48V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
âââ
VGS = -20V
â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
210 âââ âââ
Qg
Total Gate Charge
âââ 120 170
Qgs
Gate-to-Source Charge
âââ 29 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 35
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ 85 âââ
td(on)
Turn-On Delay Time
âââ 19 âââ
tr
Rise Time
âââ 82 âââ
td(off)
Turn-Off Delay Time
âââ 55 âââ
tf
Fall Time
âââ 83 âââ
Ciss
Input Capacitance
âââ 6540 âââ
Coss
Output Capacitance
âââ 720 âââ
Crss
Reverse Transfer Capacitance
âââ 360 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 1040 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)h âââ 1230 âââ
S VDS = 50V, ID = 75A
nC ID = 75A
VDS =30V
VGS = 10V g
ID = 75A, VDS =0V, VGS = 10V
ns VDD = 30V
ID = 75A
RG =2.7â¦
VGS = 10V g
pF VGS = 0V
VDS = 50V
Æ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 48V i, See Fig.11
VGS = 0V, VDS = 0V to 48V h
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) d
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 210c A MOSFET symbol
D
showing the
âââ âââ 840 A integral reverse
G
S
p-n junction diode.
âââ âââ 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g
âââ 33 50 ns TJ = 25°C
VR = 51V,
âââ 37 56
TJ = 125°C
âââ 41 62 nC TJ = 25°C
IF = 75A
di/dt = 100A/µs g
âââ 53 80
TJ = 125°C
âââ 2.1 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction  Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.07mH
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25â¦, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
 ISD ⤠75A, di/dt ⤠360A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
Â
Pulse width ⤠400µs; duty cycle ⤠2%.
2
www.irf.com
|
▷ |