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| IRFS31N20DTRLP Datasheet, PDF (2/12 Pages) International Rectifier – High Frequency DC-DC converters | |||
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IRFB/S/SL31N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
200 âââ âââ V
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.25 âââ V/°C
RDS(on)
Static Drain-to-Source On-Resistance âââ âââ 0.082 â¦
VGS(th)
Gate Threshold Voltage
3.0 âââ 5.5 V
IDSS
Drain-to-Source Leakage Current
âââ âââ 25 µA
âââ âââ 250
Gate-to-Source Forward Leakage
âââ âââ 100
IGSS
Gate-to-Source Reverse Leakage
nA
âââ âââ -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
17 âââ âââ S
Qg
Total Gate Charge
âââ 70 107
Qgs
Gate-to-Source Charge
âââ 18 23 nC
Qgd
Gate-to-Drain ("Miller") Charge
âââ 33 65
td(on)
Turn-On Delay Time
âââ 16 âââ
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 38 âââ ns
âââ 26 âââ
tf
Fall Time
âââ 10 âââ
Ciss
Input Capacitance
âââ 2370 âââ
Coss
Output Capacitance
âââ 390 âââ
Crss
Reverse Transfer Capacitance
âââ 78 âââ pF
Coss
Output Capacitance
âââ 2860 âââ
Coss
Output Capacitance
âââ 150 âââ
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 170 âââ
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Conditions
VDS = 50V, ID = 18A
ID = 18A
VDS = 160V
VGS = 10V Â
VDD = 100V
ID = 18A
RG = 2.5â¦
RD = 5.4â¦, Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
420
18
20
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
0.75
0.50
âââ
°C/W
âââ
62
âââ
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 31
A showing the
integral reverse
G
âââ âââ 124
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.3 V TJ = 25°C, IS = 18A, VGS = 0V Â
âââ 200 300 ns TJ = 25°C, IF = 18A
âââ 1.7 2.6 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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