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IRFS3107PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFS/SL3107PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ÎV(BR)DSS/ÎTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
75 âââ âââ V VGS = 0V, ID = 250μA
âââ 0.09 âââ V/°C Reference to 25°C, ID = 5mAd
âââ 2.5 3.0 mΩ VGS = 10V, ID = 140A g
2.0 âââ 4.0 V VDS = VGS, ID = 250μA
âââ âââ 20 μA VDS = 75V, VGS = 0V
âââ âââ 250
VDS = 75V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ 1.2 âââ Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
230 âââ âââ
Qg
Total Gate Charge
âââ 160 240
Qgs
Gate-to-Source Charge
âââ 38 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 54
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ 106 âââ
td(on)
Turn-On Delay Time
âââ 19 âââ
tr
Rise Time
âââ 110 âââ
td(off)
Turn-Off Delay Time
âââ 99 âââ
tf
Fall Time
âââ 100 âââ
Ciss
Input Capacitance
âââ 9370 âââ
Coss
Output Capacitance
âââ 840 âââ
Crss
Reverse Transfer Capacitance
âââ 580 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 1130 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)h âââ 1500 âââ
S VDS = 50V, ID = 140A
nC ID = 140A
VDS =38V
VGS = 10V g
ID = 140A, VDS =0V, VGS = 10V
ns VDD = 49V
ID = 140A
RG = 2.7Ω
VGS = 10V g
pF VGS = 0V
VDS = 50V
Æ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 60V i, See Fig. 11
VGS = 0V, VDS = 0V to 60V h
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) d
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 230c A MOSFET symbol
D
showing the
âââ âââ 900 A integral reverse
G
S
p-n junction diode.
âââ âââ 1.3 V TJ = 25°C, IS = 140A, VGS = 0V g
âââ 54 âââ ns TJ = 25°C
VR = 64V,
âââ 60 âââ
TJ = 125°C
âââ 103 âââ nC TJ = 25°C
IF = 140A
di/dt = 100A/μs g
âââ 132 âââ
TJ = 125°C
âââ 3.6 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction  ISD ⤠140A, di/dt ⤠1380A/μs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
temperature. Bond wire current limit is 195A. Note that current
Â
Pulse width ⤠400μs; duty cycle ⤠2%.
limitations arising from heating of the device leads may occur with  Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.045mH
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 140A, VGS =10V. Part not recommended for use
above this value .
2
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
 RθJC value shown is at time zero.
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