IRFS3107-7PPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFS3107-7PPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75 ––– –––
––– 0.083 –––
––– 2.1 2.6
V V_GS = 0V, I_D = 250µA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 160A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20 µA V_DS = 75V, V_GS = 0V
––– ––– 250
V_DS = 75V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
R_G(int)
Internal Gate Resistance
––– 2.1 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
260 ––– –––
Q_g
Total Gate Charge
––– 160 240
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 38 –––
––– 57 –––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 103 –––
t_d(on)
Turn-On Delay Time
––– 17 –––
t_r
Rise Time
––– 80 –––
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 100 –––
––– 64 –––
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 9200 –––
––– 850 –––
C_rss
Reverse Transfer Capacitance
––– 400 –––
h ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 1150 –––
g ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 1500 –––
S V_DS = 25V, I_D = 160A
nC I_D = 160A
f ^{VDS = 38V}
V_GS = 10V
I_D = 160A, V_DS =0V, V_GS = 10V
ns V_DD = 49V
I_D = 160A
f ^{RG = 2.7Ω}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz
h V_GS = 0V, V_DS = 0V to 60V
g V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 260 A MOSFET symbol
D
showing the
––– ––– 1060
integral reverse
G
––– ––– 1.3
p-n junction diode.
S
f V T_J = 25°C, I_S = 160A, V_GS = 0V
––– 52 ––– ns T_J = 25°C
V_R = 64V,
––– 63 –––
T_J = 125°C
––– 110 ––– nC T_J = 25°C
f ^{IF = 160A}
di/dt = 100A/µs
––– 160 –––
T_J = 125°C
––– 3.8 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.026mH
R_G = 25Ω, I_AS = 160A, V_GS =10V. Part not recommended for use
above this value .
ƒ I_SD ≤ 160A, di/dt ≤ 1420A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
‰ R_θJC value shown is at time zero.
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January 28, 2014