IRFS3006PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFS/SL3006PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V_(BR)DSS
Drain-to-Source Breakdown Voltage
60
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
V_GS(th)
Gate Threshold Voltage
2.0
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
R_G
Internal Gate Resistance
–––
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
280
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)} –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related) –––
Typ.
–––
0.07
2.0
–––
–––
–––
–––
–––
2.0
Typ.
–––
200
37
60
140
16
182
118
189
8970
1020
534
1480
1920
Max. Units
Conditions
–––
–––
2.5
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 170A
4.0 V V_DS = V_GS, I_D = 250µA
20 µA V_DS = 60V, V_GS = 0V
250
V_DS = 60V, V_GS = 0V, T_J = 125°C
100 nA V_GS = 20V
-100
–––
V_GS = -20V
Ω
Max. Units
Conditions
––– S V_DS = 25V, I_D = 170A
300 nC I_D = 170A
–––
g ^{VDS =30V}
V_GS = 10V
–––
I_D = 170A, V_DS =0V, V_GS = 10V
––– ns V_DD = 39V
–––
I_D = 170A
–––
–––
g ^{RG = 2.7Ω}
V_GS = 10V
––– pF V_GS = 0V
–––
V_DS = 50V
–––
ƒ = 1.0MHz, See Fig. 5
–––
–––
i V_GS = 0V, V_DS = 0V to 48V , See Fig. 11
h V_GS = 0V, V_DS = 0V to 48V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 270 A MOSFET symbol
D
showing the
––– ––– 1080 A integral reverse
G
p-n junction diode.
S
––– ––– 1.3
g V T_J = 25°C, I_S = 170A, V_GS = 0V
––– 44 ––– ns T_J = 25°C
V_R = 51V,
––– 48 –––
T_J = 125°C
––– 63 ––– nC T_J = 25°C
g ^{IF = 170A}
di/dt = 100A/µs
––– 77 –––
T_J = 125°C
––– 2.4 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ I_SD ≤ 170A, di/dt ≤ 1360A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.022mH
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R_G = 25Ω, I_AS = 170A, V_GS =10V. Part not recommended for use
above this value .
2
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C
Š R_θJC value shown is at time zero
www.irf.com