IRFS3006-7PPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFS3006-7PPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
R_G(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
60
–––
–––
2.0
–––
–––
–––
–––
–––
Typ.
–––
0.07
1.5
–––
–––
–––
–––
–––
2.1
Max. Units
Conditions
–––
–––
2.1
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 168A
4.0
20
250
100
-100
V V_DS = V_GS, I_D = 250µA
µA
V_DS = 60V, V_GS = 0V
V_DS = 60V, V_GS = 0V, T_J = 125°C
nA
V_GS = 20V
V_GS = -20V
––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
290
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
ià ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
–––
Typ.
–––
200
37
60
140
14
61
118
69
8850
1007
525
1460
1915
Max. Units
Conditions
––– S V_DS = 25V, I_D = 168A
300
I_D = 168A
g ^{––– nC VDS = 30V}
–––
V_GS = 10V
–––
I_D = 168A, V_DS =0V, V_GS = 10V
–––
V_DD = 39V
–––
–––
–––
ns
I_D = 168A
g ^{RG = 2.7Ω}
V_GS = 10V
–––
V_GS = 0V
–––
V_DS = 50V
––– pF ƒ = 1.0MHz (See Fig 5)
–––
–––
i V_GS = 0V, V_DS = 0V to 48V (See Fig 11)
h V_GS = 0V, V_DS = 0V to 48V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 293
MOSFET symbol
D
A ^{showing the}
integral reverse
G
––– ––– 1172
p-n junction diode.
S
g ––– ––– 1.3 V T_J = 25°C, I_S = 168A, V_GS = 0V
–––
–––
44
48
–––
–––
ns
T_J = 25°C
T_J = 125°C
–––
–––
51
62
–––
–––
nC
T_J = 25°C
T_J = 125°C
V_R = 51V,
g ^{IF = 168A}
di/dt = 100A/µs
––– 2.03 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 240A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.021mH
R_G = 25Ω, I_AS = 168A, V_GS =10V. Part not recommended for use
above this value .
„ I_SD ≤ 168A, di/dt ≤ 1410 A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
2
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN-994 echniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C
Š R_θJC value shown is at time zero
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