IRFS3004PBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB/S/SL3004PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
40 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.037 ––– V/°C Reference to 25°C, I_D = 5mAd
––– 1.4 1.75 _mΩ V_GS = 10V, I_D = 195A g
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20 µA V_DS = 40V, V_GS = 0V
––– ––– 250
V_DS = 40V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 2.2 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
1170 ––– –––
Q_g
Total Gate Charge
––– 160 240
Q_gs
Gate-to-Source Charge
––– 40 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 68 –––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 92 –––
t_d(on)
Turn-On Delay Time
––– 23 –––
t_r
Rise Time
––– 220 –––
t_d(off)
Turn-Off Delay Time
––– 90 –––
t_f
Fall Time
––– 130 –––
C_iss
Input Capacitance
––– 9200 –––
C_oss
Output Capacitance
––– 2020 –––
C_rss
Reverse Transfer Capacitance
––– 1340 –––
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related) i} ––– 2440 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)h}
––– 2690 –––
S V_DS = 10V, I_D = 195A
nC I_D = 187A
V_DS =20V
V_GS = 10V g
I_D = 187A, V_DS =0V, V_GS = 10V
ns V_DD = 26V
I_D = 195A
R_G = 2.7Ω
V_GS = 10V g
pF V_GS = 0V
V_DS = 25V
ƒ = 1.0 MHz, See Fig. 5
V_GS = 0V, V_DS = 0V to 32V i, See Fig. 11
V_GS = 0V, V_DS = 0V to 32V h
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) d
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 340c A MOSFET symbol
D
showing the
––– ––– 1310 A integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 195A, V_GS = 0V g
––– 27 ––– ns T_J = 25°C
V_R = 34V,
––– 31 –––
T_J = 125°C
––– 18 ––– nC T_J = 25°C
I_F = 195A
di/dt = 100A/µs g
––– 41 –––
T_J = 125°C
––– 1.2 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ I_SD ≤ 195A, di/dt ≤ 930A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.016mH
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R_G = 25Ω, I_AS = 195A, V_GS =10V. Part not recommended for use
above this value .
2
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
Š R_θJC value shown is at time zero.
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