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| IRFS11N50A Datasheet, PDF (2/9 Pages) International Rectifier – SMPS MOSFET | |||
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IRFS11N5OA
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max.
500 âââ âââ
âââ 0.060 âââ
âââ âââ 0.52
2.0 âââ 4.0
âââ âââ 25
âââ âââ 250
âââ âââ 100
âââ âââ -100
Units
V
V/°C
â¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAÂ
VGS = 10V, ID = 6.6A Â
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
Qg
Total Gate Charge
6.1 âââ âââ
âââ âââ 52
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 13
âââ âââ 18
td(on)
tr
Turn-On Delay Time
Rise Time
âââ 14 âââ
âââ 35 âââ
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 32 âââ
âââ 28 âââ
Ciss
Coss
Input Capacitance
Output Capacitance
âââ 1423 âââ
âââ 208 âââ
Crss
Coss
Reverse Transfer Capacitance
Output Capacitance
âââ 8.1 âââ
âââ 2000 âââ
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 55 âââ
âââ 97 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 6.6AÂ
ID = 11A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 ÂÂ
VDD = 250V
ID = 11A
RG = 9.1â¦
RD = 22â¦,See Fig. 10 ÂÂ
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5Â
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Â
Parameter
EAS
Single Pulse Avalanche EnergyÂÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
275
11
17
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
âââ
0.50
âââ
0.75
âââ
°C/W
62
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 11
A showing the
integral reverse
G
âââ âââ 44
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.5 V TJ = 25°C, IS = 11A, VGS = 0V Â
âââ 510 770 ns TJ = 25°C, IF = 11A
âââ 3.4 5.1 µC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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