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IRFRU9024N Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) | |||
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IRFR/U9024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 âââ âââ V VGS = 0V, ID = -250µA
âââ -0.05 âââ V/°C Reference to 25°C, ID = -1mA
âââ âââ 0.175 ⦠VGS = -10V, ID = -6.6A Â
-2.0 âââ -4.0 V VDS = VGS, ID = -250µA
2.5 âââ âââ S VDS = -25V, ID = -7.2AÂ
âââ âââ -25 µA VDS = -55V, VGS = 0V
âââ âââ -250
VDS = -44V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 19
ID = -7.2A
âââ âââ 5.1
âââ âââ 10
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13 ÂÂ
âââ 13 âââ
VDD = -28V
âââ 55 âââ ns ID = -7.2A
âââ 23 âââ
RG = 24â¦
âââ 37 âââ
RD = 3.7â¦, See Fig. 10 ÂÂ
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contactÂ
S
âââ 350 âââ
VGS = 0V
âââ 170 âââ pF VDS = -25V
âââ 92 âââ
Æ = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
V SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ -11
MOSFET symbol
A showing the
D
integral reverse
G
âââ âââ -44
p-n junction diode.
S
âââ âââ -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V Â
âââ 47 71 ns TJ = 25°C, IF = -7.2A
âââ 84 130 nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 2.8mH
RG = 25â¦, IAS = -6.6A. (See Figure 12)
 ISD ⤠-6.6A, di/dt ⤠240A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
 Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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