IRFR6215TRPBF Datasheet, PDF (2/11 Pages) International Rectifier – 175°C Operating Temperature

IRFR/U6215PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
V_GS(th)
g_fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
-0.20 –––
––– 0.295
––– 0.58
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 66
––– 8.1
––– 35
14 –––
36 –––
53 –––
37 –––
4.5 –––
7.5 –––
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -10V, I_D = -6.6A „
V_GS = -10V, I_D = -6.6A „T_J = 150°C
V_DS = V_GS, I_D = -250µA
V_DS = -50V, I_D = -6.6A†
V_DS = -150V, V_GS = 0V
V_DS = -120V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = -6.6A
V_DS = -120V
V_GS = -10V, See Fig. 6 and 13 „†
V_DD = -75V
I_D = -6.6A
R_G = 6.8Ω
R_D = 12Ω, See Fig. 10 „†
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact…
S
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
––– 860 –––
––– 220 –––
––– 130 –––
V_GS = 0V
pF V_DS = -25V
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) †
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -13
A ^{showing the}
integral reverse
G
––– ––– -44
p-n junction diode.
S
––– ––– -1.6 V T_J = 25°C, I_S = -6.6A, V_GS = 0V „
––– 160 240 ns T_J = 25°C, I_F = -6.6A
––– 1.2 1.7 µC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 14mH
R_G = 25Ω, I_AS = -6.6A. (See Figure 12)
… This is applied for I-PAK, L_S of D-PAK is measured between lead and
center of die contact
ƒ I_SD ≤-6.6A, di/dt ≤ -620A/µs, V_DD ≤ V_(BR)DSS, _{† Uses IRF6215 data and test conditions}
T_J ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com