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IRFR5410PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR/U5410PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 ÂÂÂ ÂÂÂ V
 -0.12  V/°C
  0.205 â¦
-2.0 ÂÂÂ -4.0 V
3.2 ÂÂÂ ÂÂÂ S
  -25 µA
ÂÂÂ ÂÂÂ -250
ÂÂÂ
ÂÂÂ
ÂÂÂ 100
ÂÂÂ -100
nA
ÂÂÂ ÂÂÂ 58
ÂÂÂ ÂÂÂ 8.3 nC
ÂÂÂ ÂÂÂ 32
ÂÂÂ 15 ÂÂÂ
ÂÂÂ
ÂÂÂ
58 ÂÂÂ
45 ÂÂÂ
ns
ÂÂÂ 46 ÂÂÂ
ÂÂÂ 4.5 ÂÂÂ
nH
ÂÂÂ 7.5 ÂÂÂ
ÂÂÂ 760 ÂÂÂ
ÂÂÂ 260 ÂÂÂ pF
ÂÂÂ 170 ÂÂÂ
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -7.8A Â
VDS = VGS, ID = -250µA
VDS = -50V, ID = -7.8A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -8.4A
VDS = -80V
VGS = -10V, See Fig. 6 and 13 ÂÂ
VDD = 50V
ID = -8.4A
RG = 9.1â¦
RD =6.2â¦, See Fig. 10 ÂÂ
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contactÂ
S
VGS = 0V
VDS = -25V
 = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
ÂÂÂ ÂÂÂ -13
ÂÂÂ ÂÂÂ -52
ÂÂÂ ÂÂÂ -1.6
ÂÂÂ 130 190
ÂÂÂ 650 970
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -7.8A, VGS = 0V Â
ns TJ = 25°C, IF = -8.4A
nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 6.4mH
RG = 25â¦, IAS = -7.8A. (See Figure 12)
 ISD ⤠-7.8A, di/dt ⤠200A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
 Uses IRF9530N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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