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IRFR540ZPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology | |||
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IRFR/U540ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
100 âââ âââ V VGS = 0V, ID = 250µA
e âââ 0.092 âââ V/°C Reference to 25°C, ID = 1mA
âââ 22.5 28.5 m⦠VGS = 10V, ID = 21A
2.0 âââ 4.0 V VDS = VGS, ID = 50µA
28 âââ âââ S VDS = 25V, ID = 21A
âââ âââ 20 µA VDS = 100V, VGS = 0V
âââ âââ 250
VDS = 100V, VGS = 0V, TJ = 125°C
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
âââ 39 59
ID = 21A
âââ
âââ
11
12
âââ
âââ
e nC VDS = 50V
VGS = 10V
âââ 14 âââ
VDD = 50V
âââ 42 âââ
ID = 21A
âââ
âââ
43
34
âââ
âââ
e ns RG = 13 â¦
VGS = 10V
âââ 4.5 âââ
Between lead,
D
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
and center of die contact
S
âââ 1690 âââ
VGS = 0V
âââ 180 âââ
VDS = 25V
âââ 100 âââ pF Æ = 1.0MHz
âââ 720 âââ
âââ 110 âââ
âââ 190 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 35
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 140
A showing the
integral reverse
âââ âââ 1.3
e p-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
âââ 32
âââ 40
48
60
e ns TJ = 25°C, IF = 21A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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