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IRFR5305TRLPBF Datasheet, PDF (2/11 Pages) International Rectifier – Ultra Low On-Resistance | |||
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IRFR/U5305PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max.
-55 âââ âââ
âââ -0.034 âââ
âââ âââ 0.065
-2.0 âââ -4.0
8.0 âââ âââ
âââ âââ -25
âââ âââ -250
âââ âââ 100
âââ âââ -100
âââ âââ 63
âââ âââ 13
âââ âââ 29
âââ 14 âââ
âââ 66 âââ
âââ 39 âââ
âââ 63 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 1200 âââ
âââ 520 âââ
âââ 250 âââ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A Â
VDS = VGS, ID = -250µA
VDS = -25V, ID = -16AÂ
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -16A
VDS = -44V
VGS = -10V, See Fig. 6 and 13 ÂÂ
VDD = -28V
ID = -16A
RG = 6.8â¦
RD = 1.6â¦, See Fig. 10 ÂÂ
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact Â
S
VGS = 0V
VDS = -25V
Æ = 1.0MHz, See Fig. 5 Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
âââ
ÂÂÂ
âââ
âââ
âââ
Typ.
âââ
ÂÂÂ
âââ
71
170
Max.
-31
-110
-1.3
110
250
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -16A, VGS = 0V Â
TJ = 25°C, IF = -16A
di/dt = -100A/µs ÂÂ
Notes:
 Repetitive rating; pulse width limited by
 Pulse width ⤠300µs; duty cycle ⤠2%.
max. junction temperature. (See Fig. 11)
 VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25â¦, IAS = -16A. (See Figure 12)
 ISD ⤠-16A, di/dt ⤠-280A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
Â
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
 Uses IRF5305 data and test conditions.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
** Uses typical socket mount.
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