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IRFR48ZPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology | |||
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IRFR/U48ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
55 âââ âââ
âââ 0.054 âââ
âââ 8.86 11
2.0 âââ 4.0
120 âââ âââ
âââ âââ 20
âââ âââ 250
âââ âââ 200
âââ âââ -200
âââ 40 60
âââ 11 âââ
âââ 15 âââ
âââ 15 âââ
âââ 61 âââ
âââ 40 âââ
âââ 35 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 1720 âââ
âââ 290 âââ
âââ 160 âââ
âââ 1000 âââ
âââ 230 âââ
âââ 360 âââ
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 37A
V VDS = VGS, ID = 50µA
S VDS = 25V, ID = 37A
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
ID = 37A
e nC VDS = 44V
VGS = 10V
VDD = 28V
ID = 37A
e ns RG = 12 â¦
VGS = 10V
Between lead,
D
nH 6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 37
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 250
A showing the
integral reverse
âââ âââ 1.3
âââ 20 40
âââ 14 28
e p-n junction diode.
V TJ = 25°C, IS = 37A, VGS = 0V
e ns TJ = 25°C, IF = 37A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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