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IRFR4104 Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A) | |||
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IRFR/U4104
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 âââ âââ
âââ 0.032 âââ
âââ 4.3 5.5
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 42A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
58 âââ âââ S VDS = 10V, ID = 42A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 40V, VGS = 0V
âââ âââ 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 59 89
ID = 42A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
19
24
âââ
âââ
e nC VDS = 32V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 17 âââ
VDD = 20V
tr
Rise Time
âââ 69 âââ
ID = 42A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
37
36
âââ
âââ
e ns RG = 6.8 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 2950 âââ
âââ 660 âââ
âââ 370 âââ
âââ 2130 âââ
âââ 590 âââ
âââ 850 âââ
and center of die contact
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 32V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 42
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 480
A showing the
integral reverse
âââ âââ 1.3
e p-n junction diode.
V TJ = 25°C, IS = 42A, VGS = 0V
âââ 28
âââ 24
42
36
e ns TJ = 25°C, IF = 42A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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