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| IRFR3911 Datasheet, PDF (2/10 Pages) International Rectifier – SMPS MOSFET | |||
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IRFR3911/IRFU3911
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
0.11
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.115
4.0
20
250
100
-100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 8.4A Â
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
9.6 âââ âââ
âââ 21 32
S VDS = 50V, ID = 8.4A
ID = 8.4A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 4.3 6.5
âââ 6.6 9.9
nC VDS = 80V
VGS = 10V Â
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 7.9 âââ
VDD = 500V
âââ 26 âââ ns ID = 8.4A
âââ 52 âââ
RG = 22â¦
âââ 25 âââ
VGS = 10V Â
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 740 âââ
âââ 110 âââ
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
âââ 18 âââ
âââ 700 âââ
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 61 âââ
âââ 130 âââ
VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
68
8.4
0.0056
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 14
A showing the
integral reverse
G
âââ âââ 56
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 8.4A, VGS = 0V Â
âââ 86 âââ ns TJ = 25°C, IF = 8.4A
âââ 290 âââ nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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