IRFR3711TRPBF Datasheet, PDF (2/11 Pages) International Rectifier – High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

IRFR/U3711PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_{J Breakdown Voltage Temp. Coefficient}
20 –––
––– 0.022
R_DS(on)
Static Drain-to-Source On-Resistance
––– 5.2
––– 6.7
V_GS(th)
Gate Threshold Voltage
1.0 –––
––– –––
I_DSS
Drain-to-Source Leakage Current
––– –––
––– –––
Gate-to-Source Forward Leakage
––– –––
I_GSS
Gate-to-Source Reverse Leakage
––– –––
Max
–––
–––
6.5
8.5
3.0
140
20
100
200
-200
Units
Conditions
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 1mA
e _mΩ V_GS = 10V, I_D = 15A
e V_GS = 4.5V, I_D = 12A
V V_DS = V_GS, I_D = 250µA
V_DS = 20V, V_GS = 0V
µA VDS = 16V, VGS = 0V
V_DS = 16V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 20V}
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
g_fs
Forward Transconductance
53 ––– ––– S V_DS = 16V, I_D = 30A
Q_g
Total Gate Charge
––– 29 44
I_D = 15A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
7.3
8.9
–––
–––
e nC VDS = 10V
V_GS = 4.5V
Q_oss
Output Gate Charge
––– 33 –––
V_GS = 0V, V_DS = 10V
R_G
Gate Resistance
0.3 ––– 2.5 Ω
t_d(on)
Turn-On Delay Time
––– 12 –––
V_DD = 10V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 220 –––
––– 17 –––
––– 12 –––
ns ^{ID = 30A}
R_G = 1.8Ω
e V_GS = 4.5V
C_iss
Input Capacitance
––– 2980 –––
V_GS = 0V
C_oss
Output Capacitance
––– 1770 ––– pF V_DS = 10V
C_rss
Reverse Transfer Capacitance
––– 280 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
Typ
Max
Units
–––
460
mJ
–––
30
A
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
2
Min Typ Max Units
Conditions
f ––– ––– 110
MOSFET symbol
A ^{showing the}
––– ––– 440
integral reverse
––– 0.88 1.3
––– 0.82 –––
V
e ^{p-n junction diode.}
T_J = 25°C, I_S = 30A, V_GS = 0V
e T_J = 125°C, I_S = 30A, V_GS = 0V
––– 50
––– 61
75
92
e ^{ns TJ = 25°C, IF = 16A, VR = 10V}
nC di/dt = 100A/µs
––– 48
––– 65
72
98
e ^{ns TJ = 125°C, IF = 16A, VR = 10V}
nC di/dt = 100A/µs
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