 English |
|
|
|
|
|
|
|
| IRFR3709ZCTRPBF Datasheet, PDF (2/12 Pages) International Rectifier – High Frequency Synchronous Buck Converters for Computer Processor Power | |||
| |||
| ◁ |
IRFR/U3709ZCPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
Drain-to-Source Breakdown Voltage
30 âââ âââ V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient âââ 22 âââ mV/°C Reference to 25°C, ID = 1mA
e Static Drain-to-Source On-Resistance âââ 5.2 6.5 m⦠VGS = 10V, ID = 15A
âââ 6.5 8.2
e VGS = 4.5V, ID = 12A
Gate Threshold Voltage
1.35 1.80 2.25 V VDS = VGS, ID = 250µA
Gate Threshold Voltage Coefficient
âââ -5.6 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
51 âââ âââ
âââ 17 26
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 4.7 âââ
VDS = 15V
âââ 1.6 âââ nC VGS = 4.5V
âââ 5.7 âââ
ID = 12A
âââ 5.0 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 7.3 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 10 âââ nC VDS = 16V, VGS = 0V
âââ 12 âââ
e VDD = 16V, VGS = 4.5V
âââ 12 âââ
ID = 12A
âââ 15 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 3.9 âââ
Ciss
Input Capacitance
âââ 2330 âââ
VGS = 0V
Coss
Output Capacitance
âââ 460 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 230 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
100
12
7.9
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
f Min. Typ. Max. Units
Conditions
âââ âââ 86
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
A showing the
âââ âââ 340
integral reverse
G
âââ âââ 1.0
p-n junction diode.
S
e V TJ = 25°C, IS = 12A, VGS = 0V
âââ 29
âââ 25
44
37
e ns TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese