IRFR3707ZPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – High Frequency Synchronous Buck Converters for Computer Processor Power

IRFR/U3707ZPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 ––– ––– V V_GS = 0V, I_D = 250µA
–––
–––
–––
0.023 –––
7.5 9.5
10 12.5
V/°C Reference to 25°C, I_D = 1mA
e ^mΩ V_GS = 10V, I_D = 15A
e V_GS = 4.5V, I_D = 12A
1.35 1.80 2.25 V V_DS = V_GS, I_D = 25µA
––– -5.0 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA V_DS = 24V, V_GS = 0V
––– ––– 150
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
gfs
Forward Transconductance
Q_g
Total Gate Charge
71 ––– –––
––– 9.6 14
S V_DS = 15V, I_D = 12A
Q_gs1
Q_gs2
Q_gd
Q_godr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.6 –––
––– 0.90 –––
––– 3.5 –––
––– 2.6 –––
V_DS = 15V
nC V_GS = 4.5V
I_D = 12A
See Fig. 16
Q_sw
Switch Charge (Q_gs2 + Q_gd)
––– 4.4 –––
Q_oss
t_d(on)
t_r
t_d(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
–––
–––
5.8
8.0
–––
–––
e nC VDS = 15V, VGS = 0V
V_DD = 16V, V_GS = 4.5V
––– 11 –––
I_D = 12A
––– 12 ––– ns Clamped Inductive Load
t_f
Fall Time
––– 3.3 –––
C_iss
Input Capacitance
––– 1150 –––
V_GS = 0V
C_oss
Output Capacitance
––– 260 ––– pF V_DS = 15V
C_rss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Avalanche Characteristics
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
42
12
5.0
Units
mJ
A
mJ
Diode Characteristics
Parameter
I_S
Continuous Source Current
f ^{Min. Typ. Max. Units}
Conditions
––– ––– ⁵⁶
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– 220
integral reverse
G
––– ––– 1.0
e ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 12A, V_GS = 0V
––– 25
––– 17
38
26
e ^{ns TJ = 25°C, IF = 12A, VDD = 15V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com