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IRFR3707 Datasheet, PDF (2/9 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A④) | |||
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IRFR/U3707
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
âââ
Static Drain-to-Source On-Resistance âââ
VGS(th)
Gate Threshold Voltage
1.0
âââ
IDSS
Drain-to-Source Leakage Current
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
âââ âââ
0.027 âââ
9.7 13
13.2 17.5
âââ 3.0
âââ 20
âââ 100
âââ 200
âââ -200
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A Â
VGS = 4.5V, ID = 12A Â
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
37 âââ âââ
âââ 19 âââ
âââ 8.2 âââ
âââ 6.3 âââ
âââ 18 27
âââ 8.5 âââ
âââ 78 âââ
âââ 11.8 âââ
âââ 3.3 âââ
âââ 1990 âââ
âââ 707 âââ
âââ 50 âââ
S VDS = 15V, ID = 49.6A
ID = 24.8A
nC VDS = 15V
VGS = 4.5V Â
VGS = 0V, VDS = 15V
VDD = 15V
ns ID = 24.8A
RG = 1.8â¦
VGS = 4.5V Â
VGS = 0V
VDS = 15V
pF Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
213
61
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.88
0.8
39
49
42
62
Max.
61Â
244
1.3
âââ
59
74
63
93
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 31A, VGS = 0V Â
TJ = 125°C, IS = 31A, VGS = 0V Â
TJ = 25°C, IF = 31A, VR=20V
di/dt = 100A/µs Â
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs Â
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