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IRFR3706TRPBF Datasheet, PDF (2/11 Pages) International Rectifier – SMPS MOSFET | |||
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IRFR/U3706PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ
âââ
VGS(th)
Gate Threshold Voltage
0.6
âââ
IDSS
Drain-to-Source Leakage Current
âââ
Gate-to-Source Forward Leakage
âââ
IGSS
Gate-to-Source Reverse Leakage
âââ
0.021
6.9
8.1
11.5
âââ
âââ
âââ
âââ
âââ
âââ
9.0
11
23
2.0
20
100
200
-200
V/°C
mâ¦
V
µA
nA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A Â
VGS = 4.5V, ID = 12A Â
VGS = 2.8V, ID = 7.5A Â
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
53 âââ âââ S VDS = 16V, ID = 57A
âââ 23 35
ID = 28A
âââ 8.0 12 nC VDS = 10V
âââ 5.5 8.3
VGS = 4.5V Â
âââ 16 24
VGS = 0V, VDS = 10V
âââ 1.8 âââ â¦
âââ 6.8 âââ ns VDD = 10V
âââ 87 âââ
ID = 28A
âââ 17 âââ
RG = 1.8â¦
âââ 4.8 âââ
VGS = 4.5V Â
âââ 2410 âââ
VGS = 0V
âââ 1070 âââ pF VDS = 10V
âââ 140 âââ
Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
220
28
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.88
0.82
45
65
49
78
Max. Units
75Â
A
280
1.3 V
âââ
68 ns
98 nC
74 ns
120 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 36A, VGS = 0V Â
TJ = 125°C, IS = 36A, VGS = 0V Â
TJ = 25°C, IF = 36A, VR=20V
di/dt = 100A/µs Â
TJ = 125°C, IF = 36A, VR=20V
di/dt = 100A/µs Â
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