IRFR3706CLPBF Datasheet, PDF(2/11 Page) International Rectifier

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

IRFR3706CLPBF Datasheet, PDF (2/11 Pages) International Rectifier – High Frequency Isolated DC-DC

◁

IRFR/U3706CPbF

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20 âââ âââ V VGS = 0V, ID = 250ÂµA

âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ

âââ

RDS(on)

Static Drain-to-Source On-Resistance âââ

âââ

VGS(th)

Gate Threshold Voltage

0.6

âââ

IDSS

Drain-to-Source Leakage Current

âââ

Gate-to-Source Forward Leakage

âââ

IGSS

Gate-to-Source Reverse Leakage

âââ

0.021

6.9

8.1

11.5

âââ

9.0

2.0

100

200

-200

V/Â°C

mâ¦

ÂµA

Reference to 25Â°C, ID = 1mA

VGS = 10V, ID = 15A Â

VGS = 4.5V, ID = 12A Â

VGS = 2.8V, ID = 7.5A Â

VDS = VGS, ID = 250ÂµA

VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125Â°C

VGS = 12V

VGS = -12V

Dynamic @ TJ = 25Â°C (unless otherwise specified)

Symbol

gfs

Qgs

Qgd

Qoss

td(on)

td(off)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

53 âââ âââ S VDS = 16V, ID = 57A

âââ 23 35

ID = 28A

âââ 8.0 12 nC VDS = 10V

âââ 5.5 8.3

VGS = 4.5V Â

âââ 16 24

VGS = 0V, VDS = 10V

âââ 1.8 âââ â¦

âââ 6.8 âââ ns VDD = 10V

âââ 87 âââ

ID = 28A

âââ 17 âââ

RG = 1.8â¦

âââ 4.8 âââ

VGS = 4.5V Â

âââ 2410 âââ

VGS = 0V

âââ 1070 âââ pF VDS = 10V

âââ 140 âââ

Æ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche EnergyÂ

Avalanche CurrentÂ

Typ.

âââ

Max.

220

Units

Diode Characteristics

Symbol

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) Â

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min.

âââ

Typ.

âââ

0.88

0.82

Max. Units

75Â

280

1.3 V

âââ

68 ns

98 nC

74 ns

120 nC

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25Â°C, IS = 36A, VGS = 0V Â

TJ = 125Â°C, IS = 36A, VGS = 0V Â

TJ = 25Â°C, IF = 36A, VR=20V

di/dt = 100A/Âµs Â

TJ = 125Â°C, IF = 36A, VR=20V

di/dt = 100A/Âµs Â

www.irf.com

▷