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IRFR3704 Datasheet, PDF (2/9 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A④) | |||
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IRFR/U3704
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
âââ
Static Drain-to-Source On-Resistance âââ
VGS(th)
Gate Threshold Voltage
1.0
âââ
IDSS
Drain-to-Source Leakage Current
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
âââ âââ
0.021 âââ
7.3 9.5
11 14
âââ 3.0
âââ 20
âââ 100
âââ 200
âââ -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mâ¦
VGS = 10V, ID = 15A Â
VGS = 4.5V, ID = 12A Â
V VDS = VGS, ID = 250µA
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
42 âââ âââ
âââ 19 âââ
âââ 8.1 âââ
âââ 6.4 âââ
âââ 16 24
âââ 8.4 âââ
âââ 98 âââ
âââ 12 âââ
âââ 5.0 âââ
âââ 1996 âââ
âââ 1085 âââ
âââ 155 âââ
S VDS = 10V, ID = 57A
ID = 28.4A
nC VDS = 10V
VGS = 4.5V Â
VGS = 0V, VDS = 10V
VDD = 10V
ns ID = 28.4A
RG = 1.8â¦
VGS = 4.5V Â
VGS = 0V
VDS = 10V
pF Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
216
71
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.88
0.82
38
45
Max.
75Â
300
1.3
âââ
57
68
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 35.5A, VGS = 0V Â
TJ = 125°C, IS = 35.5A, VGS = 0V Â
TJ = 25°C, IF = 35.5A, VR=20V
di/dt = 100A/µs Â
âââ 41 62
âââ 50 75
ns TJ = 125°C, IF = 35.5A, VR=20V
nC di/dt = 100A/µs Â
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