IRFR3607PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFR/U3607PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
75 ––– –––
––– 0.096 –––
––– 7.34 9.0
2.0 ––– 4.0
––– ––– 20
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 46A
V V_DS = V_GS, I_D = 100µA
µA V_DS = 75V, V_GS = 0V
I_GSS
Gate-to-Source Forward Leakage
––– ––– 250
––– ––– 100
V_DS = 60V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
Q_sync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
115 ––– –––
––– 56 84
––– 13 –––
––– 16 –––
––– 40 –––
S V_DS = 50V, I_D = 46A
nC I_D = 46A
g ^{VDS = 38V}
V_GS = 10V
I_D = 46A, V_DS =0V, V_GS = 10V
R_G(int)
Internal Gate Resistance
––– 0.55 –––
t_d(on)
Turn-On Delay Time
––– 16 –––
t_r
Rise Time
––– 110 –––
t_d(off)
Turn-Off Delay Time
––– 43 –––
t_f
Fall Time
––– 96 –––
C_iss
Input Capacitance
––– 3070 –––
C_oss
Output Capacitance
––– 280 –––
C_rss
Reverse Transfer Capacitance
––– 130 –––
j ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 380 –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 610 –––
Ω
ns V_DD = 49V
I_D = 46A
g ^{RG = 6.8Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
j V_GS = 0V, V_DS = 0V to 60V
h V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ^{––– –––} 80
A MOSFET symbol
D
showing the
––– ––– 310
integral reverse
G
p-n junction diode.
S
––– ––– 1.3
g V T_J = 25°C, I_S = 46A, V_GS = 0V
––– 33 50 ns T_J = 25°C
V_R = 64V,
––– 39 59
T_J = 125°C
––– 32 48 nC T_J = 25°C
g ^{IF = 46A}
di/dt = 100A/µs
––– 47 71
T_J = 125°C
––– 1.9 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction ^{„ ISD ≤ 46A, di/dt ≤ 1920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.}
temperature. Bond wire current limit is 56A. Note that current
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with ^{† Coss eff. (TR) is a fixed capacitance that gives the same charging time}
some lead mounting arrangements.
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
temperature.
C_oss while V_DS is rising from 0 to 80% V_DSS.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.12mH
R_G = 25Ω, I_AS = 46A, V_GS =10V. Part not recommended for use
above this value.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
2
www.irf.com