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| IRFR3518TRPBF Datasheet, PDF (2/12 Pages) International Rectifier – High frequency DC-DC converters | |||
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IRFR/U3518PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
80
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
0.09
24
âââ
âââ
âââ
âââ
âââ
âââ
âââ
29
4.0
20
250
200
-200
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 18A Â
VDS = VGS, ID = 250µA
VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
34 âââ âââ
âââ 37 56
âââ 11 âââ
âââ 12 âââ
âââ 12 âââ
âââ 25 âââ
âââ 37 âââ
âââ 13 âââ
âââ 1710 âââ
âââ 270 âââ
âââ 33 âââ
âââ 1780 âââ
âââ 170 âââ
âââ 330 âââ
S VDS = 25V, ID = 18A
ID = 18A
nC VDS = 40V
VGS = 10V Â
VDD = 40V
ns ID = 18A
RG = 9.1â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 64V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 64V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
160
18
11
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 38
A showing the
integral reverse
G
âââ âââ 150
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 18A, VGS = 0V Â
âââ 77 âââ ns TJ = 25°C, IF = 18A
âââ 210 âââ nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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