IRFR3412 Datasheet, PDF (2/10 Pages) International Rectifier – SMPS MOSFET

IRFR/U3412
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
I_GSS
Gate-to-Source Reverse Leakage
100
–––
–––
3.5
–––
–––
–––
–––
––– –––
0.10 –––
––– 0.025
––– 5.5
––– 1.0
––– 250
––– 100
––– -100
V
V/°C
Ω
V
µA
nA
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA †
V_GS = 10V, I_D = 29A „
V_DS = V_GS, I_D = 250µA
V_DS = 95V, V_GS = 0V
V_DS = 80V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
g_fs
Forward Transconductance
25 ––– –––
Q_g
Total Gate Charge
––– 59 89
Q_gs
Gate-to-Source Charge
––– 21 32
Q_gd
Gate-to-Drain ("Miller") Charge
––– 17 26
t_d(on)
Turn-On Delay Time
––– 19 –––
t_r
Rise Time
––– 68 –––
t_d(off)
Turn-Off Delay Time
––– 44 –––
t_f
Fall Time
––– 37 –––
C_iss
Input Capacitance
––– 3430 –––
C_oss
Output Capacitance
––– 270 –––
C_rss
Reverse Transfer Capacitance
––– 150 –––
C_oss
Output Capacitance
––– 1040 –––
C_oss
Output Capacitance
––– 170 –––
C_oss eff. Effective Output Capacitance
––– 270 –––
Units
S
nC
ns
pF
Conditions
V_DS = 50V, I_D = 29A
I_D = 29A
V_DS = 50V
V_GS = 10V, „
V_DD = 50V
I_D = 29A
R_G = 6.8Ω
V_GS = 10V „
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 80V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 80V …
Avalanche Characteristics
Parameter
E_AS
Single Pulse Avalanche Energy‚
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
160
29
14
Units
mJ
A
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
R_θJC
R_θJA
R_θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
–––
1.05
–––
50
°C/W
–––
110
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 0.38mH, R_G = 25Ω,
I_AS = 29A, (See Figure 12a)
ƒ I_SD ≤ 29A, di/dt ≤ 420A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
†Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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