IRFR3411TRPBF Datasheet, PDF (2/10 Pages) International Rectifier –
Advanced Process Technology

IRFR/U3411PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
E_AS
Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
Conditions
100 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.12 ––– V/°C Reference to 25°C, I_D = 1mA
––– 36 44 mΩ V_GS = 10V, I_D = 16A „
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
21 ––– ––– S V_DS = 50V, I_D = 16A„
––– ––– 25
––– ––– 250
µA ^{VDS = 100V, VGS = 0V}
V_DS = 80V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 48 71
I_D = 16A
––– 9.0 14 nC V_DS = 80V
––– 14 21
V_GS = 10V, See Fig. 6 and 13
––– 11 –––
V_DD = 50V
––– 35 ––– _ns I_D = 16A
––– 39 –––
R_G = 5.1Ω
––– 35 –––
V_GS = 10V, See Fig. 10 „
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH _{from package}
G
––– 7.5 –––
and center of die contact
S
––– 1960 –––
V_GS = 0V
––– 250 –––
V_DS = 25V
––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 700… 185† mJ I_AS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting T_J = 25°C, L =1.5mH
R_G = 25Ω, I_AS = 16A. (See Figure 12)
ƒ I_SD ≤ 16A, di/dt ≤ 340A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 33
A ^{showing the}
integral reverse
G
––– ––– 110
p-n junction diode.
S
––– ––– 1.2 V T_J = 25°C, I_S = 16A, V_GS = 0V „
––– 115 170 ns T_J = 25°C, I_F = 16A
––– 505 760 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to T_J = 175°C .
* When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint dering techniques refer to application note
#AN-994.
2
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