IRFR3303TRLPBF Datasheet, PDF (2/11 Pages) International Rectifier – Ultra Low On-Resistance

IRFR/U3303PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.032 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 0.031 Ω V_GS = 10V, I_D = 18A „
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
9.3 ––– ––– S V_DS = 25V, I_D = 18A
––– ––– 25
––– ––– 250
µA ^{VDS = 30V, VGS = 0V}
V_DS = 24V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– ––– 29
I_D = 18A
––– ––– 7.3 nC V_DS = 24V
––– ––– 13
V_GS = 10V, See Fig. 6 and 13 „
––– 11 –––
V_DD = 15V
–––
–––
99 –––
16 –––
ns
I_D = 18A
R_G = 13Ω
––– 28 –––
R_D = 0.8Ω, See Fig. 10 „
––– 4.5 –––
Between lead,
D
6mm (0.25in.)
nH _{from package}
G
––– 7.5 –––
and center of die contact†
S
––– 750 –––
V_GS = 0V
––– 400 ––– pF V_DS = 25V
––– 140 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 33… _{A showing the}
integral reverse
G
––– ––– 120
p-n junction diode.
S
––– ––– 1.3
––– 53 80
––– 94 140
V T_J = 25°C, I_S = 18A, V_GS = 0V „
ns T_J = 25°C, I_F = 18A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 590µH
R_G = 25Ω, I_AS = 18A. (See Figure 12)
ƒ I_SD ≤ 18A, di/dt ≤ 140A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Caculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A.
† This is applied for I-PAK, L_S of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994