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| IRFR2607ZTRPBF Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology | |||
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IRFR/U2607ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
75 âââ âââ
âââ 0.074 âââ
âââ 17.6 22
2.0 âââ 4.0
36 âââ âââ
âââ âââ 20
âââ âââ 250
âââ âââ 200
âââ âââ -200
âââ 34 51
âââ 8.9 âââ
âââ 14 âââ
âââ 14 âââ
âââ 59 âââ
âââ 39 âââ
âââ 28 âââ
âââ 4.5 âââ
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 30A
V VDS = VGS, ID = 50µA
S VDS = 25V, ID = 30A
µA VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
ID = 30A
e nC VDS = 60V
VGS = 10V
VDD = 38V
ID = 30A
e ns RG = 15 â¦
VGS = 10V
Between lead,
nH 6mm (0.25in.)
LS
Internal Source Inductance
âââ 7.5 âââ
from package
and center of die contact
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 1440 âââ
âââ 190 âââ
âââ 110 âââ
âââ 720 âââ
âââ 130 âââ
âââ 230 âââ
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 60V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 45
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 180
A showing the
integral reverse
âââ âââ 1.3
âââ 30 45
âââ 28 42
e p-n junction diode.
V TJ = 25°C, IS = 30A, VGS = 0V
e ns TJ = 25°C, IF = 30A, VDD = 38V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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