|
IRFR2405TRPBF Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology | |||
|
◁ |
IRFR/U2405OPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance Â
Min. Typ. Max. Units
Conditions
55 âââ âââ
âââ 0.052 âââ
âââ 0.0118 0.016
2.0 âââ 4.0
V
V/°C
â¦
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 34A Â
VDS = 10V, ID = 250µA
30 âââ âââ S VDS = 25V, ID = 34A
âââ âââ 20 µA VDS = 55V, VGS = 0V
âââ âââ 250
VDS = 44V, VGS = 0V, TJ = 150°C
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
âââ 70 110
ID = 34A
âââ 16 23
âââ 19 29
nC VDS = 44V
VGS = 10VÂ
âââ 15 âââ
VDD = 28V
âââ 130 âââ ns ID = 34A
âââ 55 âââ
RG = 6.8â¦
âââ 78 âââ
VGS = 10V Â
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contact
S
âââ 2430 âââ
VGS = 0V
âââ 470 âââ pF VDS = 25V
âââ 100 âââ
Æ = 1.0MHz, See Fig. 5
âââ 2040 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 350 âââ
âââ 350 âââ
VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 0.22mH
RG = 25â¦, IAS = 34A.
 ISD ⤠34A, di/dt ⤠190A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 56Â A showing the
integral reverse
G
âââ âââ 220
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 34A, VGS = 0V Â
âââ 62 93 ns TJ = 25°C, IF = 34A
âââ 170 260 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
 Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
www.irf.com
|
▷ |