IRFR21N60L Datasheet, PDF (2/9 Pages) International Rectifier – SMPS MOSFET

IRFP21N60L
Static @ T_J = 25°C (unless otherwise specified)
Symbol
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
I_GSS
R_G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
600
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.42
270
–––
–––
–––
–––
–––
0.63
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
––– V/°C Reference to 25°C, I_D = 1mA
f 320 _mΩ V_GS = 10V, I_D = 13A
5.0 V V_DS = V_GS, I_D = 250µA
50 µA V_DS = 600V, V_GS = 0V
2.0 mA V_DS = 480V, V_GS = 0V, T_J = 125°C
100 nA V_GS = 30V
-100
V_GS = -30V
––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff.
C_oss eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
Min.
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
20
58
33
10
4000
340
29
170
130
Max. Units
Conditions
––– S V_DS = 50V, I_D = 13A
150
I_D = 21A
46 nC V_DS = 480V
64
f V_GS = 10V, See Fig. 7 & 15
–––
V_DD = 300V
––– ns I_D = 21A
–––
R_G = 1.3Ω
–––
f V_GS = 10V, See Fig. 11a & 11b
–––
V_GS = 0V
–––
V_DS = 25V
––– pF ƒ = 1.0MHz, See Fig. 5
–––
g V_GS = 0V,V_DS = 0V to 480V
–––
(Energy Related)
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
420
21
33
Units
mJ
A
mJ
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.38
–––
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 1.9mH, R_G = 25Ω,
I_AS = 21A, dv/dt = 11V/ns. (See Figure 12a)
ƒ I_SD ≤ 21A, di/dt ≤ 530A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff.(ER) is a fixed capacitance that stores the same energy
as C_oss while V_DS is rising from 0 to 80% V_DSS.
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