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| IRFR15N20DPBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET®Power MOSFET | |||
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IRFR/U15N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
0.26
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.165
5.5
25
250
100
-100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 10A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
4.0 âââ âââ
âââ 27 41
S VDS = 50V, ID = 10A
ID = 10A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 6.9 10
âââ 14 21
nC VDS = 160V
VGS = 10V, Â
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 9.7 âââ
VDD = 100V
âââ 32 âââ ns ID = 10A
âââ 17 âââ
RG = 6.8â¦
âââ 8.9 âââ
VGS = 10V Â
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 910 âââ
âââ 170 âââ
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
âââ 31 âââ pF Æ = 1.0MHz
âââ 1380 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 67 âââ
âââ 150 âââ
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
260
10
14
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 17
A showing the
integral reverse
G
âââ âââ 68
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 10A, VGS = 0V Â
âââ 130 200 ns TJ = 25°C, IF = 10A
âââ 610 920 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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