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| IRFR120ZPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology | |||
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IRFR/U120ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
100 âââ âââ
âââ 0.084 âââ
âââ 150 190
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 5.2A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
16 âââ âââ S VDS = 25V, ID = 5.2A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 100V, VGS = 0V
âââ âââ 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 6.9 10
ID = 5.2A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
1.6
3.1
âââ
âââ
e nC VDS = 80V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 8.3 âââ
VDD = 50V
tr
Rise Time
âââ 26 âââ
ID = 5.2A
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ
âââ
27
23
âââ
âââ
e ns RG = 53 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 310 âââ
âââ 41 âââ
âââ 24 âââ
âââ 150 âââ
âââ 26 âââ
âââ 57 âââ
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 8.7
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 35
A showing the
integral reverse
âââ âââ 1.3
âââ 24 36
âââ 23 35
e p-n junction diode.
V TJ = 25°C, IS = 5.2A, VGS = 0V
e ns TJ = 25°C, IF = 5.2A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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