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IRFR1010ZPBF Datasheet, PDF (2/11 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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IRFR/U1010ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
55 âââ âââ
âââ 0.051 âââ
âââ 5.8 7.5
2.0 âââ 4.0
31 âââ âââ
âââ âââ 20
âââ âââ 250
âââ âââ 200
âââ âââ -200
âââ 63 95
âââ 17 âââ
âââ 23 âââ
âââ 17 âââ
âââ 76 âââ
âââ 42 âââ
âââ 48 âââ
âââ 4.5 âââ
âââ 7.5 âââ
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 42A
V VDS = VGS, ID = 100µA
S VDS = 25V, ID = 42A
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
ID = 42A
e nC VDS = 44V
VGS = 10V
VDD = 28V
ID = 42A
e ns RG = 7.6 â¦
VGS = 10V
Between lead,
D
nH 6mm (0.25in.)
G
from package
and center of die contact
S
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 2840 âââ
âââ 470 âââ
âââ 250 âââ
âââ 1630 âââ
âââ 360 âââ
âââ 560 âââ
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 42
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 360
A showing the
integral reverse
âââ âââ 1.3
âââ 24 36
âââ 20 30
e p-n junction diode.
V TJ = 25°C, IS = 42A, VGS = 0V
e ns TJ = 25°C, IF = 42A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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