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IRFPS59N60C Datasheet, PDF (2/3 Pages) International Rectifier – SMPS MOSFET | |||
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IRFPS59N60C
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
600 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.43 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ âââ 0.045 ⦠VGS = 10V, ID = 35A Â
4.0 âââ 6.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 100
âââ âââ 500
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
35 âââ âââ S VDS = 50V, ID = 35A
âââ âââ 490
ID = 35A
âââ âââ 100 nC VDS = 360V
âââ âââ 250
VGS = 10V Â
âââ 33 âââ
VDD = 300V
âââ 110 âââ ns ID = 35A
âââ 86 âââ
RG = 1.0â¦
âââ 18 âââ
RD = 8.5⦠Â
âââ 10490 âââ
VGS = 0V
âââ 5140 âââ
VDS = 25V
âââ 280 âââ pF Æ = 1.0MHz,
âââ 24050 âââ
âââ 220 âââ
âââ 370 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 480V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
TBD
35
39
Units
mJ
A
mJ
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.24
âââ
Max.
0.32
âââ
40
Units
°C/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 59
A showing the
integral reverse
G
âââ âââ 240
p-n junction diode.
S
âââ âââ 1.2 V TJ = 25°C, IS = 35A, VGS = 0V Â
âââ 770 1150 ns TJ = 25°C, IF = 35A
âââ 20 30 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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