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| IRFPS43N50K Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A) | |||
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IRFPS43N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.60 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ 0.078 0.090 ⦠VGS = 10V, ID = 28A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 500V, VGS = 0V
âââ âââ 250 µA VDS = 400V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
23 âââ âââ S VDS = 50V, ID = 28A
âââ âââ 350
ID = 47A
âââ âââ 85 nC VDS = 400V
âââ âââ 180
VGS = 10V, See Fig. 6 and 13 Â
âââ 25 âââ
VDD = 250V
âââ 140 âââ ns ID = 47A
âââ 55 âââ
RG = 1.0â¦
âââ 74 âââ
VGS = 10V,See Fig. 10 Â
âââ 8310 âââ
VGS = 0V
âââ 960 âââ
VDS = 25V
âââ 120 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 10170 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 240 âââ
âââ 440 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 47
A showing the
integral reverse
G
âââ âââ 190
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 47A, VGS = 0V Â
âââ 620 940 ns TJ = 25°C, IF = 47A
âââ 14 21 µC di/dt = 100A/µs Â
âââ 38 âââ A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 0.82mH, RG = 25â¦,
IAS = 47A (See Figure 12a).
 ISD ⤠47A, di/dt ⤠230A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
2
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
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