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IRFPS3810PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFPS3810PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance Â
Min. Typ. Max.
100 âââ âââ
âââ 0.11 âââ
âââ âââ 0.009
3.0 âââ 5.0
52 âââ âââ
âââ âââ 25
âââ âââ 250
âââ âââ 100
âââ âââ -100
âââ 260 390
âââ 49 74
âââ 160 250
âââ 24 âââ
âââ 270 âââ
âââ 45 âââ
âââ 140 âââ
âââ 5.0 âââ
âââ 13 âââ
âââ 6790 âââ
âââ 2470 âââ
âââ 990 âââ
âââ 10740 âââ
âââ 1180 âââ
âââ 2210 âââ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A Â
VDS = 10V, ID = 250µA
VDS = 50V, ID = 100A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
ID = 100A
VDS = 80V
VGS = 10VÂ
VDD = 50V
ID = 100A
RG = 1.03â¦
VGS = 10V Â
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
 Starting TJ = 25°C, L = 0.27mH
RG = 25â¦, IAS = 100A. (See Figure 12)
 ISD ⤠100A, di/dt ⤠350A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 170Â
A
showing the
integral reverse
G
âââ âââ 670
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 100A, VGS = 0V Â
âââ 220 330 ns TJ = 25°C, IF = 100A
âââ 1640 2460 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
 Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
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