IRFPS3810 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A⑥)

IRFPS3810
APPROVED
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
Conditions
100 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.11 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 0.009 Ω V_GS = 10V, I_D = 100A „
3.0 ––– 5.0 V V_DS = 10V, I_D = 250µA
52 ––– ––– S V_DS = 50V, I_D = 100A
––– ––– 25 _µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 80V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 30V
––– ––– -100
V_GS = -30V
––– 260 390
I_D = 100A
––– 49 74 nC V_DS = 80V
––– 160 250
V_GS = 10V„
––– 24 –––
V_DD = 50V
––– 270 ––– _ns I_D = 100A
––– 45 –––
R_G = 1.03Ω
––– 140 –––
V_GS = 10V „
Between lead,
D
––– 5.0 –––
6mm (0.25in.)
nH
from package
G
––– 13 –––
and center of die contact
S
––– 6790 –––
V_GS = 0V
––– 2470 ––– pF V_DS = 25V
––– 990 –––
ƒ = 1.0MHz, See Fig. 5
––– 10740 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
––– 1180 –––
––– 2210 –––
V_GS = 0V, V_DS = 80V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting T_J = 25°C, L = 0.27mH
R_G = 25Ω, I_AS = 100A. (See Figure 12)
ƒ I_SD ≤ 100A, di/dt ≤ 350A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 170†
A
showing the
integral reverse
G
––– ––– 670
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 100A, V_GS = 0V „
––– 220 330 ns T_J = 25°C, I_F = 100A
––– 1640 2460 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
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